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ZXTD3M832
MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR
SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual PNP transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count
MLP832
FEATURES
* Low Equivalent On Resistance * Extremely Low Saturation Voltage (-220mV max @1A) * hFE specified up to -3A * IC = -3A Continuous Collector Current * 3mm x 2mm MLP
APPLICATIONS
* * * * *
DC - DC Converters Charging circuits Power switches Motor control CCFL Backlighting
ORDERING INFORMATION
DEVICE ZXTD3M832TA ZXTD3M832TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000
DEVICE MARKING
* D33
Underside view
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ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a) (f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Operating & Storage Temperature Range Junction Temperature SYMBOL V CBO V CEO V EBO I CM IC IB PD PD PD PD PD PD T j :T stg Tj LIMIT -50 -40 -7.5 -4 -3 -1000 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 150 UNIT V V V A A mA W mW/ C W mW/ C W mW/ C W mW/ C W mW/ C W mW/ C C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient Junction to Ambient (b)(f) Junction to Ambient (b)(f) Junction to Ambient (d)(f) Junction to Ambient Junction to Ambient (e)(g)
(d)(g) (a)(f)
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83.3 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
NOTES (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t 5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250C/W giving a power rating of Ptot=500mW
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TYPICAL CHARACTERISTICS
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PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -25 -150 -195 -210 -260 -0.97 -0.89 300 300 180 60 12 150 480 450 290 130 22 190 19 40 435 2% 25 MIN. -50 -40 -7.5 TYP. -80 -70 -8.5 -25 -25 -25 -40 -220 -300 -300 -370 -1.05 -0.95 MAX. UNIT CONDITIONS V V V nA nA nA mV mV mV mV mV V V I C =-100 A I C =-10mA* I E =-100 A V CB =-40V V EB =-6V V CES =-32V I C =-0.1A, I B =-10mA* I C =-1A, I B =-50mA* I C =-1.5A, I B =-100mA* I C =-2A, I B =-200mA* I C =-2.5A, I B =-250mA* I C =-2.5A, I B =-250mA* I C =-2.5A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-0.1A, V CE =-2V* I C =-1A, V CE =-2V* I C =-1.5A, V CE =2V* I C =-3A, V CE =-2V* MHz I C =-50mA, V CE =-10V f=100MHz pF ns ns V CB =-10A, f=1MHz V CC =-15V, I C =-0.75A I B1 =I B2 =-15mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
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TYPICAL CHARACTERISTICS
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PACKAGE OUTLINE
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM A A1 A2 A3 b b1 D D2 D3 Millimetres Min 0.80 0.00 0.65 0.15 0.24 0.17 Max 1.00 0.05 0.75 0.25 0.34 0.30 Inches Min 0.031 0.00 0.0255 0.006 0.009 0.0066 Max 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r Millimetres Min Max Inches Min Max
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 0 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.01 1.02 1.21
0.118 BSC 0.032 0.0397 0.040 0.0476
0.0029 0 12
(c) Zetex plc 2003
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com ISSUE 1 - JUNE 2003
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